An HEMT includes a buffer layer, a hole-supply layer on the buffer layer, a heterostructure on the hole-supply layer, and a source electrode. The hole-supply layer is made of P-type doped semiconductor material, the buffer layer is doped with carbon, and the source electrode is in direct electrical contact with the hole-supply layer, such that the hole-supply layer can be biased to facilitate the transport of holes from the hole-supply layer to the buffer layer.

HEMT transistor with high stress resilience during off state and manufacturing method thereof / Iucolano, Ferdinando; Chini, Alessandro. - (2018 Jun 08).

HEMT transistor with high stress resilience during off state and manufacturing method thereof

Alessandro Chini
2018

Abstract

An HEMT includes a buffer layer, a hole-supply layer on the buffer layer, a heterostructure on the hole-supply layer, and a source electrode. The hole-supply layer is made of P-type doped semiconductor material, the buffer layer is doped with carbon, and the source electrode is in direct electrical contact with the hole-supply layer, such that the hole-supply layer can be biased to facilitate the transport of holes from the hole-supply layer to the buffer layer.
24-dic-2019
STMicroelectronics SRL
US10516041B2
Internazionale
Iucolano, Ferdinando; Chini, Alessandro
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1167434
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