The present invention relates, in general, to enhancement/ depletion Pseudomorphic High Electron Mobility Transistors (PHEMTs) and, in particular, to an enhancement/depletion PHEMT device and a method for manufacturing enhancement/depletion PHEMT devices that finds advantageous, but not exclusive, application in the production of integrated circuits operating at millimetre-wave and microwave frequencies.

Enhancement-/depletion-PHEMT device and manufacturing method thereof / Chini, Alessandro; Lanzieri, Claudio. - (2012 Jul 31).

Enhancement-/depletion-PHEMT device and manufacturing method thereof

Alessandro Chini;
2012

Abstract

The present invention relates, in general, to enhancement/ depletion Pseudomorphic High Electron Mobility Transistors (PHEMTs) and, in particular, to an enhancement/depletion PHEMT device and a method for manufacturing enhancement/depletion PHEMT devices that finds advantageous, but not exclusive, application in the production of integrated circuits operating at millimetre-wave and microwave frequencies.
23-lug-2014
Selex ES SpA
EP2555242B1
Europeo
Chini, Alessandro; Lanzieri, Claudio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1167433
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