A process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a field effect transistors. This fabrication process permits a tight control on the field plate operation since dielectric material deposition/growth is typically a well controllable process. Moreover, the dielectric material deposited on the device surface does not need to be removed from the device intrinsic regions: this essentially enables the realization of field-plated devices without the need of low-damage dielectric material dry/wet etches. Using multiple gate field plates also reduces gate resistance by multiple connections, thus improving performances of large periphery and/or sub-micron gate devices.

Fabrication of single or multiple gate field plates / Chini, Alessandro; Mishra, Umesh K.; Parikh, Primit; Wu, Yifeng. - (2010 Oct 05).

Fabrication of single or multiple gate field plates

Alessandro Chini;
2010-10-05

Abstract

A process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a field effect transistors. This fabrication process permits a tight control on the field plate operation since dielectric material deposition/growth is typically a well controllable process. Moreover, the dielectric material deposited on the device surface does not need to be removed from the device intrinsic regions: this essentially enables the realization of field-plated devices without the need of low-damage dielectric material dry/wet etches. Using multiple gate field plates also reduces gate resistance by multiple connections, thus improving performances of large periphery and/or sub-micron gate devices.
15-nov-2016
University of California, Cree Inc
US9496353B2
Internazionale
Chini, Alessandro; Mishra, Umesh K.; Parikh, Primit; Wu, Yifeng
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1167429
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