EnglishA process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a field effect transistors. This fabrication process permits a tight control on the field plate operation since dielectric material deposition/growth is typically a well controllable process. Moreover, the dielectric material deposited on the device surface does not need to be removed from the device intrinsic regions: this essentially enables the realization of field-plated devices without the need of low-damage dielectric material dry/wet etches. Using multiple gate field plates also reduces gate resistance by multiple connections, thus improving performances of large periphery and/or sub-micron gate devices.
Fabrication of single or multiple gate field plates / CHINI, Alessandro; Mishra, Umesh K.; Parikh, Primit; Wu, Yifeng. - (2004 Sep 09).
| Data di pubblicazione: | 9-set-2004 | |
| Data di concessione: | 2010-10-12 | |
| Titolo: | Fabrication of single or multiple gate field plates | |
| Autore/i: | CHINI, Alessandro; Mishra, Umesh K.; Parikh, Primit; Wu, Yifeng | |
| Autore/i UNIMORE: | ||
| Handle: | http://hdl.handle.net/11380/1109190 | |
| Enti collegati: | University of California, Cree Inc | |
| Rilevanza: | Internazionale | |
| Numero di deposito: | US7812369B2 | |
| Tipologia | Brevetto |
File in questo prodotto:
| File | Descrizione | Tipologia | |
|---|---|---|---|
| US7812369B2.pdf | Versione dell'editore (versione pubblicata) | Open Access Visualizza/Apri |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
Copyright © 2022