An embodiment of the present invention concerns a layered epitaxial structure for enhancement/ depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/ depletion PHEMT device that finds advantageous, but not exclusive, application in the manufacturing of integrated circuits operating at millimeter-Wave and microWave frequencies.
Enhancement/depletion PHEMT device / Chini, Alessandro; Lanzieri, Claudio. - (2012 Jul 30).
Enhancement/depletion PHEMT device
Alessandro Chini;
2012
Abstract
An embodiment of the present invention concerns a layered epitaxial structure for enhancement/ depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/ depletion PHEMT device that finds advantageous, but not exclusive, application in the manufacturing of integrated circuits operating at millimeter-Wave and microWave frequencies.
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