An embodiment of the present invention concerns a layered epitaxial structure for enhancement/ depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/ depletion PHEMT device that finds advantageous, but not exclusive, application in the manufacturing of integrated circuits operating at millimeter-Wave and microWave frequencies.

Enhancement/depletion PHEMT device / Chini, Alessandro; Lanzieri, Claudio. - (2012 Jul 30).

Enhancement/depletion PHEMT device

Alessandro Chini;
2012-07-30

Abstract

An embodiment of the present invention concerns a layered epitaxial structure for enhancement/ depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/ depletion PHEMT device that finds advantageous, but not exclusive, application in the manufacturing of integrated circuits operating at millimeter-Wave and microWave frequencies.
17-dic-2013
Selex Sistemi Integrati SpA
US8610173B2
Internazionale
Chini, Alessandro; Lanzieri, Claudio
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1109189
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