The physics of trap-to-trap transitions in chalcogenide materials is worked out as a combination of energy and space transitions. A microscopic master equation is written suitable to be included into device simulations.

Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides / Massimo, Rudan; Fabio, Giovanardi; Buscemi, Fabrizio; Brunetti, Rossella; Giuliano, Marcolini. - STAMPA. - (2013), pp. 428-431. (Intervento presentato al convegno 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) tenutosi a Glasgow nel 3-5 september 2013) [10.1109/SISPAD.2013.6650666].

Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides

BUSCEMI, Fabrizio;BRUNETTI, Rossella;
2013

Abstract

The physics of trap-to-trap transitions in chalcogenide materials is worked out as a combination of energy and space transitions. A microscopic master equation is written suitable to be included into device simulations.
2013
18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Glasgow
3-5 september 2013
428
431
Massimo, Rudan; Fabio, Giovanardi; Buscemi, Fabrizio; Brunetti, Rossella; Giuliano, Marcolini
Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides / Massimo, Rudan; Fabio, Giovanardi; Buscemi, Fabrizio; Brunetti, Rossella; Giuliano, Marcolini. - STAMPA. - (2013), pp. 428-431. (Intervento presentato al convegno 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) tenutosi a Glasgow nel 3-5 september 2013) [10.1109/SISPAD.2013.6650666].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/986108
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