The coupled dynamics of free carriers and excitons after non-resonant excitation with short laser pulses is investigated by means of an Ensemble Monte Carlo method which includes phonon-assisted formation and dissociation of free excitons. Simulations for bulk GaAs reveal that excitonic binding under participation of LO phonons is a very fast and effective process. The temporal rise of exciton luminescence depends on the particular excitation conditions and is determined by all interaction mechanisms in the system.
Fast exciton and free-carrier kinetics in semiconductors: A Monte Carlo simulation / Selbmann, Pe; Gulia, M; Molinari, Elisa; Rossi, F; Lugli, P.. - In: NUOVO CIMENTO DELLA SOCIETÀ ITALIANA DI FISICA. D CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS. - ISSN 0392-6737. - STAMPA. - 17:(1995), pp. 1717-1722.
Fast exciton and free-carrier kinetics in semiconductors: A Monte Carlo simulation
MOLINARI, Elisa;
1995
Abstract
The coupled dynamics of free carriers and excitons after non-resonant excitation with short laser pulses is investigated by means of an Ensemble Monte Carlo method which includes phonon-assisted formation and dissociation of free excitons. Simulations for bulk GaAs reveal that excitonic binding under participation of LO phonons is a very fast and effective process. The temporal rise of exciton luminescence depends on the particular excitation conditions and is determined by all interaction mechanisms in the system.
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