Space charge layer formation and collective excitations of the Cs/InSb(110) and the Bi/InSb(110) interfaces have been studied by means of high resolution electron energy loss spectroscopy (HREELS). The influence of bismuth is effective in slightly enlarging the depletion layer thickness, while the alkali metal induces an accumulation layer up to the formation of one-dimensional (1D) chains. When a 2D Cs layer is formed the space charge layer is depleted of carriers. The influence of the atomic geometry on the Fermi level pinning is considered.
Space charge layer at metal/InSb(110) interfaces / Betti, Maria Grazia; Martinelli, V; Biagi, Roberto; DEL PENNINO, Umberto; Mariani, Carlo. - In: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - ISSN 0368-2048. - STAMPA. - 76:(1995), pp. 459-463.
Space charge layer at metal/InSb(110) interfaces
BETTI, Maria Grazia;BIAGI, Roberto;DEL PENNINO, Umberto;MARIANI, Carlo
1995
Abstract
Space charge layer formation and collective excitations of the Cs/InSb(110) and the Bi/InSb(110) interfaces have been studied by means of high resolution electron energy loss spectroscopy (HREELS). The influence of bismuth is effective in slightly enlarging the depletion layer thickness, while the alkali metal induces an accumulation layer up to the formation of one-dimensional (1D) chains. When a 2D Cs layer is formed the space charge layer is depleted of carriers. The influence of the atomic geometry on the Fermi level pinning is considered.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
