Magnetic states of the electron gas confined in modulation-doped core-shell nanowires are calculated for a transverse field of arbitrary strength and orientation. Magnetoconductance is predicted within the Landauer approach. The modeling takes fully into account the radial material modulation, the prismatic symmetry, and the doping profile of realistic GaAs/AlGaAs devices within an envelope-function approach, and electron-electron interaction is included in a mean-field self-consistent approach. Calculations show that in the low free-carrier density regime, magnetic states can be described in terms of Landau levels and edge states, similar to planar two-dimensional electron gases in a Hall bar. However, at higher carrier density, the dominating electron-electron interaction leads to a strongly inhomogeneous localization at the prismatic heterointerface. This gives rise to a complex band dispersion, with local minima at finite values of the longitudinal wave vector, and a region of negative magnetoresistance. The predicted marked anisotropy of the magnetoconductance with field direction is a direct probe of the inhomogeneous electron gas localization of the conductive channel induced by the prismatic geometry.

Landau levels, edge states, and magnetoconductance in GaAs/AlGaAs core-shell nanowires / ROYO VALLS, Miguel; Bertoni, Andrea; Goldoni, Guido. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 87:(2013), pp. 115316-1-115316-9. [10.1103/PhysRevB.87.115316]

Landau levels, edge states, and magnetoconductance in GaAs/AlGaAs core-shell nanowires

ROYO VALLS, MIGUEL;BERTONI, Andrea;GOLDONI, Guido
2013

Abstract

Magnetic states of the electron gas confined in modulation-doped core-shell nanowires are calculated for a transverse field of arbitrary strength and orientation. Magnetoconductance is predicted within the Landauer approach. The modeling takes fully into account the radial material modulation, the prismatic symmetry, and the doping profile of realistic GaAs/AlGaAs devices within an envelope-function approach, and electron-electron interaction is included in a mean-field self-consistent approach. Calculations show that in the low free-carrier density regime, magnetic states can be described in terms of Landau levels and edge states, similar to planar two-dimensional electron gases in a Hall bar. However, at higher carrier density, the dominating electron-electron interaction leads to a strongly inhomogeneous localization at the prismatic heterointerface. This gives rise to a complex band dispersion, with local minima at finite values of the longitudinal wave vector, and a region of negative magnetoresistance. The predicted marked anisotropy of the magnetoconductance with field direction is a direct probe of the inhomogeneous electron gas localization of the conductive channel induced by the prismatic geometry.
2013
87
115316-1
115316-9
Landau levels, edge states, and magnetoconductance in GaAs/AlGaAs core-shell nanowires / ROYO VALLS, Miguel; Bertoni, Andrea; Goldoni, Guido. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 87:(2013), pp. 115316-1-115316-9. [10.1103/PhysRevB.87.115316]
ROYO VALLS, Miguel; Bertoni, Andrea; Goldoni, Guido
File in questo prodotto:
File Dimensione Formato  
PhysRevB.87.115316.13.pdf

Accesso riservato

Tipologia: Versione pubblicata dall'editore
Dimensione 2.63 MB
Formato Adobe PDF
2.63 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/936889
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 30
  • ???jsp.display-item.citation.isi??? 29
social impact