We observe a trend between initial leakage currents in polycrystalline HfOx resisitive random access memory (RRAM) cells (before forming) and the forming voltages. This trend points to the dominant role played by conduction paths located at grain boundaries, which is promoted by the oxygen deficiency in ${rm HfO}_{rm x}$. One of these paths is then converted into the conductive filament responsible for nonvolatile resistance switching. In addition, we find that by engineering the RRAM stack, the forming voltage can be tuned-up to meet specific RRAM requirements, such as lower power and forming-less operations.
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices / K. G., Young Fisher; G., Bersuker; B., Butcher; Padovani, Andrea; Larcher, Luca; D., Veksler; D. C., Gilmer. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - ELETTRONICO. - 34:(2013), pp. 750-752. [10.1109/LED.2013.2256101]
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices
PADOVANI, ANDREA;LARCHER, Luca;
2013
Abstract
We observe a trend between initial leakage currents in polycrystalline HfOx resisitive random access memory (RRAM) cells (before forming) and the forming voltages. This trend points to the dominant role played by conduction paths located at grain boundaries, which is promoted by the oxygen deficiency in ${rm HfO}_{rm x}$. One of these paths is then converted into the conductive filament responsible for nonvolatile resistance switching. In addition, we find that by engineering the RRAM stack, the forming voltage can be tuned-up to meet specific RRAM requirements, such as lower power and forming-less operations.
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