The random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM). Variation of the FoM value over multiple set/reset cycles is found to follow the log-normal distribution. In HRS, P-p decreases with the reduction of the read current, which allows scaling of the RRAM operating current. The RTN effect is attributed to the mechanism of activation/deactivation of the electron traps in (in HRS) or near (in LRS) the filament that affects the current through the RRAM device.
Random telegraph noise (RTN) in scaled RRAM devices / D., Veksler; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Muraviev; B., Chakrabarti; E., Vogel; D. C., Gilmer; P. D., Kirsch. - ELETTRONICO. - (2013), pp. MY.10.1-MY.10.4. (Intervento presentato al convegno 2013 IEEE International Reliability Physics Symposium, IRPS 2013 tenutosi a Monterey, CA, USA nel 14-18 Aprile 2013) [10.1109/IRPS.2013.6532101].
Random telegraph noise (RTN) in scaled RRAM devices
VANDELLI, LUCA;PADOVANI, ANDREA;LARCHER, Luca;
2013
Abstract
The random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM). Variation of the FoM value over multiple set/reset cycles is found to follow the log-normal distribution. In HRS, P-p decreases with the reduction of the read current, which allows scaling of the RRAM operating current. The RTN effect is attributed to the mechanism of activation/deactivation of the electron traps in (in HRS) or near (in LRS) the filament that affects the current through the RRAM device.Pubblicazioni consigliate
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