In this paper we analyze Random Telegraph Signal (RTS) noise cand Power Spectral Density (PSD) in hafnium-based RRAMs. RTS measured in HRS exhibits fast and slow multilevel switching events. RTS characteristics are examined through novel color-coded time-lag plots and Hidden Markov Model (HMM) time-series analyses. Results are validated by comparing simulated and experimental PSD. Noise is examined at different reset conditions to provide an insight into the conduction mechanisms in HRS. Higher reset voltages are found to result in greater RTS complexity due to a larger number of active traps as confirmed by PSD.
RTS Noise Characterization of HfOx RRAM in High Resistive State / Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Larcher, Luca; G., Bersuker. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - ELETTRONICO. - 84:(2013), pp. 160-166. [10.1016/j.sse.2013.02.023]
RTS Noise Characterization of HfOx RRAM in High Resistive State
PUGLISI, Francesco Maria;PAVAN, Paolo;PADOVANI, ANDREA;LARCHER, Luca;
2013
Abstract
In this paper we analyze Random Telegraph Signal (RTS) noise cand Power Spectral Density (PSD) in hafnium-based RRAMs. RTS measured in HRS exhibits fast and slow multilevel switching events. RTS characteristics are examined through novel color-coded time-lag plots and Hidden Markov Model (HMM) time-series analyses. Results are validated by comparing simulated and experimental PSD. Noise is examined at different reset conditions to provide an insight into the conduction mechanisms in HRS. Higher reset voltages are found to result in greater RTS complexity due to a larger number of active traps as confirmed by PSD.
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