A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface grown at room temperature is presented. Analysis of the Fuchs-Kliewer phonon and of the dopant-induced free carrier plasmon is performed through an appropriate fit to the data, by using a dielectric model calculation. A Fermi level pinning of 0.6 eV is determined at one monolayer coverage for this semiconducting interface, and at the present doping level (n-type, n almost-equal-to 2.7 x 10(18) cm-3). The low-energy electronic properties of a 700 angstrom thick Bi crystal grown on GaAs(110) are also studied, and electronic interband transitions at 47 and approximately 200 meV are singled out in semimetallic bismuth.

ELECTRONIC AND DIELECTRIC-PROPERTIES OF BI GROWN ON GAAS(110) / DE RENZI, Valentina; Betti, M. G.; Mariani, C.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - ELETTRONICO. - 287:(1993), pp. 550-553. [10.1016/0039-6028(93)90840-G]

ELECTRONIC AND DIELECTRIC-PROPERTIES OF BI GROWN ON GAAS(110)

DE RENZI, Valentina;
1993

Abstract

A high resolution electron-energy-loss spectroscopy investigation of the Bi/[n-GaAs(110)] interface grown at room temperature is presented. Analysis of the Fuchs-Kliewer phonon and of the dopant-induced free carrier plasmon is performed through an appropriate fit to the data, by using a dielectric model calculation. A Fermi level pinning of 0.6 eV is determined at one monolayer coverage for this semiconducting interface, and at the present doping level (n-type, n almost-equal-to 2.7 x 10(18) cm-3). The low-energy electronic properties of a 700 angstrom thick Bi crystal grown on GaAs(110) are also studied, and electronic interband transitions at 47 and approximately 200 meV are singled out in semimetallic bismuth.
1993
287
550
553
ELECTRONIC AND DIELECTRIC-PROPERTIES OF BI GROWN ON GAAS(110) / DE RENZI, Valentina; Betti, M. G.; Mariani, C.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - ELETTRONICO. - 287:(1993), pp. 550-553. [10.1016/0039-6028(93)90840-G]
DE RENZI, Valentina; Betti, M. G.; Mariani, C.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/856900
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