Visible photoluminescence has been observed at cryogenic temperatures from crystalline Si bombarded with He and exposed to H either as plasma or gas in the 250-450 degrees C temperature range. The experimental results are consistent with the formation of Si nanoparticles produced by He segregation, which is responsible for exciton localization, and H passivation of the nonradiative recombination centers.
Visible photoluminescence from He‐implanted silicon / D., Bisero; Corni, Federico; Nobili, Carlo Emanuele; Tonini, Rita; Ottaviani, Giampiero; C., Mazzoleni; L., Pavesi. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 67:(1995), pp. 3447-3450. [10.1063/1.115275]
Visible photoluminescence from He‐implanted silicon
CORNI, Federico;NOBILI, Carlo Emanuele;TONINI, Rita;OTTAVIANI, Giampiero;
1995
Abstract
Visible photoluminescence has been observed at cryogenic temperatures from crystalline Si bombarded with He and exposed to H either as plasma or gas in the 250-450 degrees C temperature range. The experimental results are consistent with the formation of Si nanoparticles produced by He segregation, which is responsible for exciton localization, and H passivation of the nonradiative recombination centers.
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