Energy loss spectroscopy obtained on clean cleaved Si(111) covered with different gold thickness is considered. The results indicate that in the Si-Au system the interface is characterized by a Si rich phase with a well defined electron transition at 7. 5 ev energy loss. Increasing Au thickness the main changes in the spectrum arise in the low energy loss region and a gold-like behavior is observed for a gold coverage of 60 monolayers. The effects of annealing at 350 degree C are reported.
Low-energy electron-loss spectroscopy and Auger-electron-spectroscopy studies of noble-metal—silicon interfaces: Si-Au system / P., Perfetti; Nannarone, Stefano; F., Patella; C., Quaresima; M., Capozi; A., Savoia; G., Ottaviani. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 26:(1982), pp. 1125-1138. [10.1103/PhysRevB.26.1125]
Low-energy electron-loss spectroscopy and Auger-electron-spectroscopy studies of noble-metal—silicon interfaces: Si-Au system
NANNARONE, Stefano;
1982
Abstract
Energy loss spectroscopy obtained on clean cleaved Si(111) covered with different gold thickness is considered. The results indicate that in the Si-Au system the interface is characterized by a Si rich phase with a well defined electron transition at 7. 5 ev energy loss. Increasing Au thickness the main changes in the spectrum arise in the low energy loss region and a gold-like behavior is observed for a gold coverage of 60 monolayers. The effects of annealing at 350 degree C are reported.
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