In this paper we investigate in details the effects of the Ti metal electrode on the forming operation in HfO2 RRAM devices. Starting from electrical data and physico-chemical analysis, we use physics-based RRAM modeling to understand the physics governing the CF formation in RRAM stacks with Ti electrodes. Simulations show that the lower forming voltage typically observed in these devices is due to the Ti-induced formation of a sub-stoichiometric HfOx region in the resistive switching layer. The model allows extracting the characteristics of this sub-stoichiometric region that are crucial for developing future low-voltage RRAM devices.
In this paper we investigate in details the effects of the Ti metal electrode on the forming operation in HfO2 RRAM devices. Starting from electrical data and physico-chemical analysis, we use physics-based RRAM modeling to understand the physics governing the CF formation in RRAM stacks with Ti electrodes. Simulations show that the lower forming voltage typically observed in these devices is due to the Ti-induced formation of a sub-stoichiometric HfOx region in the resistive switching layer. The model allows extracting the characteristics of this sub-stoichiometric region that are crucial for developing future low-voltage RRAM devices. © 2012 IEEE.
Understanding the Role of the Ti Metal Electrode on the Forming of HfO2-based RRAMs / Padovani, Andrea; Larcher, Luca; Pavan, Paolo; C., Cagli; B., de Salvo. - STAMPA. - (2012), pp. 127-130. (Intervento presentato al convegno 2012 4th IEEE International Memory Workshop, IMW 2012 tenutosi a Milano, ita nel Maggio 21-23, 2012) [10.1109/IMW.2012.6213667].
Understanding the Role of the Ti Metal Electrode on the Forming of HfO2-based RRAMs
PADOVANI, ANDREA;LARCHER, Luca;PAVAN, Paolo;
2012
Abstract
In this paper we investigate in details the effects of the Ti metal electrode on the forming operation in HfO2 RRAM devices. Starting from electrical data and physico-chemical analysis, we use physics-based RRAM modeling to understand the physics governing the CF formation in RRAM stacks with Ti electrodes. Simulations show that the lower forming voltage typically observed in these devices is due to the Ti-induced formation of a sub-stoichiometric HfOx region in the resistive switching layer. The model allows extracting the characteristics of this sub-stoichiometric region that are crucial for developing future low-voltage RRAM devices. © 2012 IEEE.
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