The convergent beam electron diffraction technique (CBED) of the transmission electron microscopy (TEM) has been employed to determine the strain distribution along a cutline parallel to the padoxide/Si interface in a 0.80 mu m wide recessed-LOGOS structure, The values of the components of the strain tensor so obtained have been compared with those computed by two simulator codes. It has been found that both the LOCOS morphology and the strain distribution deduced from TEM images and TEM/CBED patterns, respectively, were in agreement with the simulation results, if some oxidation-related parameters were modified. (C) 2000 Elsevier Science Ltd. All rights reserved.
TEM/CBED determination of strain in silicon-based submicrometric electronic devices / Armigliatoa, A; Balboni, R; Balboni, S; Frabboni, Stefano; Tixier, A; Carnevale, Gp; Colpani, P; Pavia, G; Marmiroli, A.. - In: MICRON. - ISSN 0968-4328. - STAMPA. - 31:3(2000), pp. 203-209. [10.1016/S0968-4328(99)00084-0]
TEM/CBED determination of strain in silicon-based submicrometric electronic devices
FRABBONI, Stefano;
2000
Abstract
The convergent beam electron diffraction technique (CBED) of the transmission electron microscopy (TEM) has been employed to determine the strain distribution along a cutline parallel to the padoxide/Si interface in a 0.80 mu m wide recessed-LOGOS structure, The values of the components of the strain tensor so obtained have been compared with those computed by two simulator codes. It has been found that both the LOCOS morphology and the strain distribution deduced from TEM images and TEM/CBED patterns, respectively, were in agreement with the simulation results, if some oxidation-related parameters were modified. (C) 2000 Elsevier Science Ltd. All rights reserved.
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