Thermal desorption spectra at constant ramp rate have been determined after helium implantation into bare silicon prepared for a large set of experimental conditions. The spectra can phenomenologically be classified as composed by two peaks: the alpha peak, centered on a temperature of 750-800 degrees C with a shoulder extending to lower temperature (down to 550 degrees C), and the beta peak, centered on a lower temperature depending on the implantation-annealing conditions. The alpha peak is attributed to the emission from cavities, while the beta peak is attributed to the emission from vacancylike defects. A detailed theory describing helium effusion from stable cavities as controlled by the interatomic helium-helium potential is proposed and found to reproduce accurately most of the alpha peaks. The postimplantation of hydrogen into samples displaying a pure beta emission results in an alpha peak which can be described by the same model as above provided that the cavities are unstable and shrink during desorption in such a way as to maintain constant the concentration of contained helium.

Thermal desorption spectra from cavities in helium-implanted silicon / Cerofolini, Gf; Calzolari, G; Corni, Federico; Frabboni, Stefano; Nobili, Carlo Emanuele; Ottaviani, Giampiero; Tonini, Rita. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 61:(2000), pp. 10183-10193. [10.1103/PhysRevB.61.10183]

Thermal desorption spectra from cavities in helium-implanted silicon

CORNI, Federico;FRABBONI, Stefano;NOBILI, Carlo Emanuele;OTTAVIANI, Giampiero;TONINI, Rita
2000

Abstract

Thermal desorption spectra at constant ramp rate have been determined after helium implantation into bare silicon prepared for a large set of experimental conditions. The spectra can phenomenologically be classified as composed by two peaks: the alpha peak, centered on a temperature of 750-800 degrees C with a shoulder extending to lower temperature (down to 550 degrees C), and the beta peak, centered on a lower temperature depending on the implantation-annealing conditions. The alpha peak is attributed to the emission from cavities, while the beta peak is attributed to the emission from vacancylike defects. A detailed theory describing helium effusion from stable cavities as controlled by the interatomic helium-helium potential is proposed and found to reproduce accurately most of the alpha peaks. The postimplantation of hydrogen into samples displaying a pure beta emission results in an alpha peak which can be described by the same model as above provided that the cavities are unstable and shrink during desorption in such a way as to maintain constant the concentration of contained helium.
2000
61
10183
10193
Thermal desorption spectra from cavities in helium-implanted silicon / Cerofolini, Gf; Calzolari, G; Corni, Federico; Frabboni, Stefano; Nobili, Carlo Emanuele; Ottaviani, Giampiero; Tonini, Rita. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 61:(2000), pp. 10183-10193. [10.1103/PhysRevB.61.10183]
Cerofolini, Gf; Calzolari, G; Corni, Federico; Frabboni, Stefano; Nobili, Carlo Emanuele; Ottaviani, Giampiero; Tonini, Rita
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/7261
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