Charge transport in amorphous chalcogenide-GST used for memory devices is modeled by means of two contributions: hopping of trapped electrons and motion of band electrons. Field-induced emission is accounted for as the mechanism mainly responsible for the trap-to-band transitions. The experimental snap-back behavior of the I(V) curves is reproduced even in the simple case of one-dimensional, uniform structures as the one considered in the paper.
Modeling of the voltage snap-back in amorphous gst memory devices / M., Rudan; F., Giovanardi; T., Tsafack; X., Xiong; E., Piccinini; F., Buscemi; A., Liao; E., Pop; Brunetti, Rossella; Jacoboni, Carlo. - STAMPA. - (2010), pp. 257-260. (Intervento presentato al convegno 15th international conference on simulation of semiconductor processes and devices tenutosi a Bologna (Italy) nel september 6-8 2010) [10.1109/SISPAD.2010.5604511].
Modeling of the voltage snap-back in amorphous gst memory devices
BRUNETTI, Rossella;JACOBONI, Carlo
2010
Abstract
Charge transport in amorphous chalcogenide-GST used for memory devices is modeled by means of two contributions: hopping of trapped electrons and motion of band electrons. Field-induced emission is accounted for as the mechanism mainly responsible for the trap-to-band transitions. The experimental snap-back behavior of the I(V) curves is reproduced even in the simple case of one-dimensional, uniform structures as the one considered in the paper.
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