We propose a solid-state implementation of stimulated Raman adiabatic passage in two coupled semiconductor quantum dots. Proper combination of two pulsed laser fields allows the coherent carrier transfer between the two nanostructures without suffering significant losses due to environment coupling. By use of a general solution scheme for the carrier states in the double-dot structure, we identify the pertinent dot and laser parameters. (C) 2000 American Institute of Physics. [S0003-6951(00)05338-9].

Coherent population transfer in coupled semiconductor quantum dots / Hohenester, U; Troiani, Filippo; Molinari, Elisa; Panzarini, G; Macchiavello, C.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 77:12(2000), pp. 1864-1866. [10.1063/1.1311820]

Coherent population transfer in coupled semiconductor quantum dots

TROIANI, Filippo;MOLINARI, Elisa;
2000

Abstract

We propose a solid-state implementation of stimulated Raman adiabatic passage in two coupled semiconductor quantum dots. Proper combination of two pulsed laser fields allows the coherent carrier transfer between the two nanostructures without suffering significant losses due to environment coupling. By use of a general solution scheme for the carrier states in the double-dot structure, we identify the pertinent dot and laser parameters. (C) 2000 American Institute of Physics. [S0003-6951(00)05338-9].
2000
77
12
1864
1866
Coherent population transfer in coupled semiconductor quantum dots / Hohenester, U; Troiani, Filippo; Molinari, Elisa; Panzarini, G; Macchiavello, C.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 77:12(2000), pp. 1864-1866. [10.1063/1.1311820]
Hohenester, U; Troiani, Filippo; Molinari, Elisa; Panzarini, G; Macchiavello, C.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/7011
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