The ordered (1 x 2) monolayer of Bi on the InAs(110) surface is studied by means of angle-resolved high-resolution ultra-violet photoemission at room temperature. Four bands of Bi;induced surface states are singled out and their dispersion is mapped along the high-symmetry directions of the surface Brillouin zone. The highest occupied state S' lies inside the InAs(110) energy gap at 0.2 eV binding energy and spreads across the Fermi level, determining the semimetallic character of the system. The second-highest occupied state Sn is located at 0.83 eV binding energy (at <(Gamma)over bar>), while states Sm and SN are located near the internal gap edge at 2.57 eV and 3.3 eV binding energy, and present band dispersions along <(Gamma)over bar>(X) over bar of similar to 340 meV and 300 meV, respectively. The Pi-induced bands of the (1 x 2) phase are shifted in energy relative to the corresponding bands of the (1 x 1)-Bi/InAs(110) phase and their width is reduced. These differences are discussed in the light of the geometric structure of the two phases.

The ordered (1 × 2) monolayer of Bi on the InAs(110) surface is studied by means of angle-resolved high-resolution ultra-violet photoemission at room temperature. Four bands of Bi-induced surface states are singled out and their dispersion is mapped along the high-symmetry directions of the surface Brillouin zone. The highest occupied state SI lies inside the InAs(110) energy gap at 0.2 eV binding energy and spreads across the Fermi level, determining the semimetallic character of the system. The second-highest occupied state SII is located at 0.83 eV binding energy (at Γ̄), while states SIII and SIV are located near the internal gap edge at 2.57 eV and 3.3 eV binding energy, and present band dispersions along Γ̄X̄ of approx. 340 meV and 300 meV, respectively. The Bi-induced bands of the (1 × 2) phase are shifted in energy relative to the corresponding bands of the (1 × 1)-Bi/InAs(110) phase and their width is reduced. These differences are discussed in the light of the geometric structure of the two phases.

Occupied surface-state bands of the (1 x 2) ordered phase of Bi/InAs(110) / DE RENZI, Valentina; Betti, Mg; Mariani, C; Almeida, J; Grioni, M.. - In: JOURNAL OF PHYSICS. CONDENSED MATTER. - ISSN 0953-8984. - STAMPA. - 12:35(2000), pp. 7721-7726. [10.1088/0953-8984/12/35/307]

Occupied surface-state bands of the (1 x 2) ordered phase of Bi/InAs(110)

DE RENZI, Valentina;
2000

Abstract

The ordered (1 × 2) monolayer of Bi on the InAs(110) surface is studied by means of angle-resolved high-resolution ultra-violet photoemission at room temperature. Four bands of Bi-induced surface states are singled out and their dispersion is mapped along the high-symmetry directions of the surface Brillouin zone. The highest occupied state SI lies inside the InAs(110) energy gap at 0.2 eV binding energy and spreads across the Fermi level, determining the semimetallic character of the system. The second-highest occupied state SII is located at 0.83 eV binding energy (at Γ̄), while states SIII and SIV are located near the internal gap edge at 2.57 eV and 3.3 eV binding energy, and present band dispersions along Γ̄X̄ of approx. 340 meV and 300 meV, respectively. The Bi-induced bands of the (1 × 2) phase are shifted in energy relative to the corresponding bands of the (1 × 1)-Bi/InAs(110) phase and their width is reduced. These differences are discussed in the light of the geometric structure of the two phases.
2000
12
35
7721
7726
Occupied surface-state bands of the (1 x 2) ordered phase of Bi/InAs(110) / DE RENZI, Valentina; Betti, Mg; Mariani, C; Almeida, J; Grioni, M.. - In: JOURNAL OF PHYSICS. CONDENSED MATTER. - ISSN 0953-8984. - STAMPA. - 12:35(2000), pp. 7721-7726. [10.1088/0953-8984/12/35/307]
DE RENZI, Valentina; Betti, Mg; Mariani, C; Almeida, J; Grioni, M.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/7004
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 3
social impact