The Sn-InSb interface and alpha-Sn ultrathin film formation on the sputter-annealed clean A- and B-type InSb(111) surfaces are studied by high-resolution UV photoelectron spectroscopy. The valence band and In-4d core levels, along with the relieving of the clean surface reconstruction, suggest a model for the interface formation at low coverage. At higher Sn thickness a good-quality alpha-Sn(111)-(1 x 1) layer is formed, and the In-4d and Sn-4d core-level analysis shows a slight In interdiffusion present on both substrates. (C) 2000 Elsevier Science B,V. All rights reserved.
alpha-Sn pseudomorphic growth on InSb (111) and ((111))under-bar surfaces: a high-resolution photoemission study / Fantini, Paolo; Gardonio, S; Barbieri, P; DEL PENNINO, Umberto; Mariani, Carlo; Betti, Maria Grazia; Magnano, E; Pivetta, M; Sancrotti, M.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 463:3(2000), pp. 174-182. [10.1016/S0039-6028(00)00564-1]
alpha-Sn pseudomorphic growth on InSb (111) and ((111))under-bar surfaces: a high-resolution photoemission study
FANTINI, Paolo;DEL PENNINO, Umberto;MARIANI, Carlo;BETTI, Maria Grazia;
2000
Abstract
The Sn-InSb interface and alpha-Sn ultrathin film formation on the sputter-annealed clean A- and B-type InSb(111) surfaces are studied by high-resolution UV photoelectron spectroscopy. The valence band and In-4d core levels, along with the relieving of the clean surface reconstruction, suggest a model for the interface formation at low coverage. At higher Sn thickness a good-quality alpha-Sn(111)-(1 x 1) layer is formed, and the In-4d and Sn-4d core-level analysis shows a slight In interdiffusion present on both substrates. (C) 2000 Elsevier Science B,V. All rights reserved.
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