The initial stages of cobalt disilicide formation on Si(111) and Si(100)surfaces are studied using backscattered electron imaging of the near-surface atomicstructure. Both the reactive deposition and the solid phase epitaxy are investigatedin the coverage range of 1-10 ML of Co. The evidence for CoSi2 island formation atthe earliest stages of the process is found. The epitaxial orientations of disilicidelayers grown on Si(111) and Si(100) surfaces are determined.
Initial stages of cobalt disilicide formation on silicon single crystals / M. V., Gomoyunova; I. I., Pronin; D. A., Valdaitsev; N. S., Faradzhev; Luches, Paola; Rota, Alberto; Valeri, Sergio. - In: PHYSICS OF LOW-DIMENSIONAL STRUCTURES. - ISSN 0204-3467. - ELETTRONICO. - 3-4:(2002), pp. 167-177.
Initial stages of cobalt disilicide formation on silicon single crystals
LUCHES, Paola;ROTA, Alberto;VALERI, Sergio
2002
Abstract
The initial stages of cobalt disilicide formation on Si(111) and Si(100)surfaces are studied using backscattered electron imaging of the near-surface atomicstructure. Both the reactive deposition and the solid phase epitaxy are investigatedin the coverage range of 1-10 ML of Co. The evidence for CoSi2 island formation atthe earliest stages of the process is found. The epitaxial orientations of disilicidelayers grown on Si(111) and Si(100) surfaces are determined.
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