By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament features controlling TiN/HfO2/TiN resistive memory operations. The forming process is found to define the filament geometry, which in turn determines the temperature profile and, consequently, the switching characteristics. The findings point to the critical importance of controlling filament dimensions during the forming process (polarity, max current/voltage, etc.).
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties / G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy. - STAMPA. - (2010), pp. 19.6.1-19.6.4. (Intervento presentato al convegno 2010 IEEE International Electron Devices Meeting, IEDM 2010 tenutosi a San Francisco, CA, usa nel 6-8 Dec. 2010) [10.1109/IEDM.2010.5703394].
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
VANDELLI, LUCA;PADOVANI, ANDREA;LARCHER, Luca;
2010
Abstract
By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament features controlling TiN/HfO2/TiN resistive memory operations. The forming process is found to define the filament geometry, which in turn determines the temperature profile and, consequently, the switching characteristics. The findings point to the critical importance of controlling filament dimensions during the forming process (polarity, max current/voltage, etc.).
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