We investigate the role of the 0.5 eV traps in determining GaN HEMT degradation by means of DC and rf testing, and 2D numerical simulation. We demonstrate that generation of deep levels, having an activation energy of 0.5 eV, is responsible for the degradation observed during rf aging; we show that the occurrence of trap-induced degradation depends on rf driving conditions. We also show that degradation can be explained by the generation of a damaged region within the AlGaN layer at the gate-drain edge, and that the DC and pulsed device degradation effects have a different dependence on the width and depth of the damaged region.
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs / Chini, Alessandro; Fantini, Fausto; DI LECCE, Valerio; Esposto, Michele; Stocco, A.; Ronchi, N.; Zanon, F.; Meneghesso, G.; Zanoni, E.. - STAMPA. - (2009), pp. 7.7.1-7.7.4. (Intervento presentato al convegno International Electron Devices Meeting, IEDM 2009 tenutosi a Baltimore nel 7-9 Dec. 2009) [10.1109/IEDM.2009.5424394].
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs
CHINI, Alessandro;FANTINI, Fausto;DI LECCE, Valerio;ESPOSTO, Michele;
2009
Abstract
We investigate the role of the 0.5 eV traps in determining GaN HEMT degradation by means of DC and rf testing, and 2D numerical simulation. We demonstrate that generation of deep levels, having an activation energy of 0.5 eV, is responsible for the degradation observed during rf aging; we show that the occurrence of trap-induced degradation depends on rf driving conditions. We also show that degradation can be explained by the generation of a damaged region within the AlGaN layer at the gate-drain edge, and that the DC and pulsed device degradation effects have a different dependence on the width and depth of the damaged region.
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