Experimental angle-integrated photoemission curves taken on Cl-covered (110) surfaces of GaAs, GaSb, and InSb have been compared to tight-binding calculations of the local density of states. The results clearly demonstrate that the Cl adatoms are bound to the anion substrate atoms rather than to the cation substrate atoms. Some qualitative information is also provided on surface relaxation and on chemisorption bond lengths.
CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB / Margaritondo, G; Rowe, Je; Bertoni, Carlo Maria; CALANDRA BUONAURA, Carlo; Manghi, Franca. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 20:(1979), pp. 1538-1545.
CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB
BERTONI, Carlo Maria;CALANDRA BUONAURA, Carlo;MANGHI, Franca
1979
Abstract
Experimental angle-integrated photoemission curves taken on Cl-covered (110) surfaces of GaAs, GaSb, and InSb have been compared to tight-binding calculations of the local density of states. The results clearly demonstrate that the Cl adatoms are bound to the anion substrate atoms rather than to the cation substrate atoms. Some qualitative information is also provided on surface relaxation and on chemisorption bond lengths.
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