Asymmetric light and electron-beam induced current profiles have been previously attributed to a difference of the diffusion length on the two sides of the grain boundary. This feature is instead due to the grain boundary not being perpendicular to the surface. In this geometry, the equations describing the minority-carrier diffusion are not solvable by analytical procedures. A method for their numerical solution is introduced, fast enough to allow the use of minimization procedures. A good agreement is found between fitted values of the grain boundary inclination and those directly measured.
Oblique grain boundaries: analysis of light and electron beam induced current profiles in silicon / A., Mittiga; M., Capizzi; C., Coluzza; A., Frova; V., Parisi; D., Cavalcoli; L., Moro; Prudenziati, Maria. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 63:(1988), pp. 4748-4750.
Oblique grain boundaries: analysis of light and electron beam induced current profiles in silicon
PRUDENZIATI, Maria
1988
Abstract
Asymmetric light and electron-beam induced current profiles have been previously attributed to a difference of the diffusion length on the two sides of the grain boundary. This feature is instead due to the grain boundary not being perpendicular to the surface. In this geometry, the equations describing the minority-carrier diffusion are not solvable by analytical procedures. A method for their numerical solution is introduced, fast enough to allow the use of minimization procedures. A good agreement is found between fitted values of the grain boundary inclination and those directly measured.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
