The immersion in HF solutions of silicon containing nanocavities (produced by the annealing at high temperature, 950 degrees C, of silicon implanted with helium at high fluence, 2 X 10(16) cm(-2)) results in the injection of hydrogen in an infrared-mute state (most likely HA into the nanocavities. The pressure achieved in the cavities is sufficiently high to stabilize the hydrogen coverage of the inner surfaces at: temperatures exceeding by 200 degrees C the one of complete desorption from the outer surface.
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution / Romano, E.; Cerofolini, G. F.; Narducci, D.; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 603:14(2009), pp. 2188-2192. [10.1016/j.susc.2009.04.017]
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution
CORNI, Federico;FRABBONI, Stefano;OTTAVIANI, Giampiero;TONINI, Rita
2009
Abstract
The immersion in HF solutions of silicon containing nanocavities (produced by the annealing at high temperature, 950 degrees C, of silicon implanted with helium at high fluence, 2 X 10(16) cm(-2)) results in the injection of hydrogen in an infrared-mute state (most likely HA into the nanocavities. The pressure achieved in the cavities is sufficiently high to stabilize the hydrogen coverage of the inner surfaces at: temperatures exceeding by 200 degrees C the one of complete desorption from the outer surface.
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