We have tested the use of atomic oxygen to prepare 3d oxide-metal interfaces for which standard reactivedeposition techniques based on molecular oxygen fail in providing well-defined chemical composition andcontrolled atomic structure and morphology. Using monolayer NiO001 on Ag001 as a model system, wefind that NiO001/Ag001 films grown by atomic oxygen have a two-dimensional highly stoichiometric11 structure and a uniform monoatomic thickness, while those grown by conventional O2 have a nonstoichiometric21 structure or a three-dimensional morphology. Atomic oxygen may provide a practical wayto prepare 3d oxide-metal interfaces with highly controlled stoichiometry, structure, and morphology.
Growth of oxide-metal interfaces by atomic oxygen: monolayer NiO(001) on Ag(001) / Rota, Alberto; S., Altieri; Valeri, Sergio. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 79(2009), p. 161401.
Data di pubblicazione: | 2009 |
Titolo: | Growth of oxide-metal interfaces by atomic oxygen: monolayer NiO(001) on Ag(001) |
Autore/i: | Rota, Alberto; S., Altieri; Valeri, Sergio |
Autore/i UNIMORE: | |
Rivista: | |
Volume: | 79 |
Pagina iniziale: | 161401 |
Codice identificativo ISI: | WOS:000265945200014 |
Citazione: | Growth of oxide-metal interfaces by atomic oxygen: monolayer NiO(001) on Ag(001) / Rota, Alberto; S., Altieri; Valeri, Sergio. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 79(2009), p. 161401. |
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