Evaluation of the mobility in a Si-SiO2 inversion layer at T=0 using Greeen's function formalism

The transport properties of low-dimensional systems, such as inversion layers, quantum wells, heterostructures and superlattices, have been a focus of scientific research for many years, but more so recently due to the advances in the miscrofabrication of metallic and semiconductors nanostructures. In these structures, the motion of the electrons in the direction perpendicular to the interface is quantized, and the electronic states are grouped into electronic subbands. At low temperature, dominant scattering mechanisms in these structures are charged impurity and surface-roughness scattering. In our model, we include all of the aforementioned dissipative mechanisms.