The Si layer thickness dependence of the optical properties of silicon/silicon dioxide (Si/SiO2) superlattices has been,for the ®rst time, theoretically investigated. In our ®rst principle calculation we consider both fully passivated interfacesand the presence of oxygen vacancy at the interface. Our results show the key role played both by the quantum con®nedstates and interface states in the experimentally observed visible luminescence in Si/SiO2 con®ned systems.
The electronic and optical properties of Si/SiO2 superlattices: Role of confined and defect states / Degoli, Elena; Ossicini, Stefano. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 470:1-2(2000), pp. 32-42. [10.1016/S0039-6028(00)00832-3]
The electronic and optical properties of Si/SiO2 superlattices: Role of confined and defect states
DEGOLI, Elena;OSSICINI, Stefano
2000
Abstract
The Si layer thickness dependence of the optical properties of silicon/silicon dioxide (Si/SiO2) superlattices has been,for the ®rst time, theoretically investigated. In our ®rst principle calculation we consider both fully passivated interfacesand the presence of oxygen vacancy at the interface. Our results show the key role played both by the quantum con®nedstates and interface states in the experimentally observed visible luminescence in Si/SiO2 con®ned systems.
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