In this paper, we report on the early increase of the de current gain (burn-in effect) due to the electrical stress of carbon doped GaInP/GaAs heterojunction bipolar transistors (HBT's). Devices featuring different passivation layers, base doping, and emitter widths were investigated. The obtained data demonstrate that the burn-in effect is due to a reduction of the surface recombination located at the extrinsic base surface, around the emitter perimeter. It is concluded that the recombination centers are related to defects at the passivation/semiconductor interface and that, during the stress, they are passivated by hydrogen atoms released from C-H complexes.
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's / Borgarino, Mattia; R., Plana; S. L., Delage; Fantini, Fausto; J., Graffeuil. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 46:(1999), pp. 10-16.
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's
BORGARINO, Mattia;FANTINI, Fausto;
1999
Abstract
In this paper, we report on the early increase of the de current gain (burn-in effect) due to the electrical stress of carbon doped GaInP/GaAs heterojunction bipolar transistors (HBT's). Devices featuring different passivation layers, base doping, and emitter widths were investigated. The obtained data demonstrate that the burn-in effect is due to a reduction of the surface recombination located at the extrinsic base surface, around the emitter perimeter. It is concluded that the recombination centers are related to defects at the passivation/semiconductor interface and that, during the stress, they are passivated by hydrogen atoms released from C-H complexes.
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