The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs doped-channel heterostructure field-effect transistors (HFETs) both through measurements and two-dimensional (2-D) device simulations. The kink is shown to arise from the interaction of surface deep acceptors with impact-ionization-generated holes, the latter partially discharging the deep levels and therefore leading to conductive-channel widening and to drain-current increase. Under pulsed operation, kink dynamics is governed by hole emission, and capture phenomena, prevailing at low and high drain-source voltages, respectively.
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs / Mazzanti, Andrea; Verzellesi, Giovanni; Canali, Claudio; G., Meneghesso; E., Zanoni. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 23:7(2002), pp. 383-385. [10.1109/LED.2002.1015205]
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs
MAZZANTI, Andrea;VERZELLESI, Giovanni;CANALI, Claudio;
2002
Abstract
The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs doped-channel heterostructure field-effect transistors (HFETs) both through measurements and two-dimensional (2-D) device simulations. The kink is shown to arise from the interaction of surface deep acceptors with impact-ionization-generated holes, the latter partially discharging the deep levels and therefore leading to conductive-channel widening and to drain-current increase. Under pulsed operation, kink dynamics is governed by hole emission, and capture phenomena, prevailing at low and high drain-source voltages, respectively.
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