IGBT reliability is becoming of great relevance, due to the range of application of these devices. Nevertheless, no standard test methods have been established, in order to evaluate their power cycling reliability. On this paper we report on the effect of Delta T and T-jmax on the power cycling capability of IGBT dice, by means of a matrix of stress cycles with different values of Delta T and T-jmax. Failure analysis has been performed, in order to understand the failure mechanisms induced by the stress. (C) 1998 Elsevier Science Ltd. All rights reserved.
On the effect of power cycling stress on IGBT modules / P., Cova; Fantini, Fausto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 38:(1998), pp. 1347-1352.
On the effect of power cycling stress on IGBT modules
FANTINI, Fausto
1998
Abstract
IGBT reliability is becoming of great relevance, due to the range of application of these devices. Nevertheless, no standard test methods have been established, in order to evaluate their power cycling reliability. On this paper we report on the effect of Delta T and T-jmax on the power cycling capability of IGBT dice, by means of a matrix of stress cycles with different values of Delta T and T-jmax. Failure analysis has been performed, in order to understand the failure mechanisms induced by the stress. (C) 1998 Elsevier Science Ltd. All rights reserved.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
