The overall workplan for assuring the reliability of GaAs MESFETS is presented, as a result of 10 years of industrial experience. The importance of an accurate evaluation of failure mechanisms and acceleration factors is pointed out, describing problems and criticalities related to the reliability testing and the failure analysis of this kind of devices.

Life tests and field results of GaAs FETs / P., Brambilla; Fantini, Fausto; F., Magistrali; M., Sangalli. - In: ANNALES DES TÉLÉCOMMUNICATIONS. - ISSN 0003-4347. - STAMPA. - 45:(1990), pp. 617-624.

Life tests and field results of GaAs FETs.

FANTINI, Fausto;
1990

Abstract

The overall workplan for assuring the reliability of GaAs MESFETS is presented, as a result of 10 years of industrial experience. The importance of an accurate evaluation of failure mechanisms and acceleration factors is pointed out, describing problems and criticalities related to the reliability testing and the failure analysis of this kind of devices.
1990
45
617
624
Life tests and field results of GaAs FETs / P., Brambilla; Fantini, Fausto; F., Magistrali; M., Sangalli. - In: ANNALES DES TÉLÉCOMMUNICATIONS. - ISSN 0003-4347. - STAMPA. - 45:(1990), pp. 617-624.
P., Brambilla; Fantini, Fausto; F., Magistrali; M., Sangalli
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/610513
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