Due to their wurzite structure, GaN quantum wells and dots arecharacterized by large built-in piezoelectric fields.These induce a spatial separation between the confined electron andholes, thus favouring the formation of electric dipoles.Here, we theoretically investigate the effects of the long-range,dipole-dipole interaction between two excitons in a GaN/Al(x)Ga(1-x)Nmicrodisk.These Coulomb interactions are shown to strongly affect the biexcitonground state. In particular, they induce strong spatial correlationsbetween the two excitons and result in biexciton binding energiesof the order of 1 meV.

Coulomb-induced nonlinearities in GaN microdisks / S., Shojaei; F., Troiani; A., Asgari; M., Kalafi; Goldoni, Guido. - In: THE EUROPEAN PHYSICAL JOURNAL. B, CONDENSED MATTER PHYSICS. - ISSN 1434-6028. - STAMPA. - 65:4(2008), pp. 505-509. [10.1140/epjb/e2008-00357-8]

Coulomb-induced nonlinearities in GaN microdisks

GOLDONI, Guido
2008

Abstract

Due to their wurzite structure, GaN quantum wells and dots arecharacterized by large built-in piezoelectric fields.These induce a spatial separation between the confined electron andholes, thus favouring the formation of electric dipoles.Here, we theoretically investigate the effects of the long-range,dipole-dipole interaction between two excitons in a GaN/Al(x)Ga(1-x)Nmicrodisk.These Coulomb interactions are shown to strongly affect the biexcitonground state. In particular, they induce strong spatial correlationsbetween the two excitons and result in biexciton binding energiesof the order of 1 meV.
2008
65
4
505
509
Coulomb-induced nonlinearities in GaN microdisks / S., Shojaei; F., Troiani; A., Asgari; M., Kalafi; Goldoni, Guido. - In: THE EUROPEAN PHYSICAL JOURNAL. B, CONDENSED MATTER PHYSICS. - ISSN 1434-6028. - STAMPA. - 65:4(2008), pp. 505-509. [10.1140/epjb/e2008-00357-8]
S., Shojaei; F., Troiani; A., Asgari; M., Kalafi; Goldoni, Guido
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/597010
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