An iterative procedure to include phonon disturbance into a Monte Carlo algorithm is presented. Low temperature transport in p-Ge is considered. Calculations show that carrier drift velocity and mean energy increase as a result of the phonon amplification.
Monte Carlo analysis of hot-phonon effects on non-polar semiconductors transport properties / Bordone, Paolo; Jacoboni, Carlo; P., Lugli; L., Reggiani; P., Kocevar. - In: PHYSICA. B + C. - ISSN 0378-4363. - STAMPA. - 134:1-3(1985), pp. 169-173. [10.1016/0378-4363(85)90338-9]
Monte Carlo analysis of hot-phonon effects on non-polar semiconductors transport properties
BORDONE, Paolo;JACOBONI, Carlo;
1985
Abstract
An iterative procedure to include phonon disturbance into a Monte Carlo algorithm is presented. Low temperature transport in p-Ge is considered. Calculations show that carrier drift velocity and mean energy increase as a result of the phonon amplification.
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