The present paper focuses on the influence of the emitter orientation on the electrical characteristics of GaInP/GaAs HBTs. The investigations was carried out by means of DC and Low Frequency Noise (LFN) measurements in the 250Hz-100kHz frequency range. Samples featuring a conventional Carbon-doped base and Indium-codoped/Carbon-doped base were available. We demonstrated that the emitter orientation has an impact on the DC and LFN characteristics of HBTs. This behaviour has been attributed to piezoelectric effects and surface recombinations in the extrinsic base region around the emitter perimeter.
The influence of the emitter orientation on the DC and low frequency noise characteristics of GaInP/GaAs HBTs / Borgarino, Mattia; J. G., Tartarin; R., Plana; S., Delage; J., Graffeuil; Fantini, Fausto. - STAMPA. - Not available:(1998), pp. 111-116. (Intervento presentato al convegno Gallium Arsenide and related III-V Compounds Application Symposium tenutosi a Amsterdam (The Netherlands) nel 5-6 October 1998).
The influence of the emitter orientation on the DC and low frequency noise characteristics of GaInP/GaAs HBTs
BORGARINO, Mattia;FANTINI, Fausto
1998
Abstract
The present paper focuses on the influence of the emitter orientation on the electrical characteristics of GaInP/GaAs HBTs. The investigations was carried out by means of DC and Low Frequency Noise (LFN) measurements in the 250Hz-100kHz frequency range. Samples featuring a conventional Carbon-doped base and Indium-codoped/Carbon-doped base were available. We demonstrated that the emitter orientation has an impact on the DC and LFN characteristics of HBTs. This behaviour has been attributed to piezoelectric effects and surface recombinations in the extrinsic base region around the emitter perimeter.
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