The description of the optical-generation phenomena has been incorporated in the semiconductor-device analysis program HFIELDS. This has been achieved by introducing a number of optical windows and interleaved material layers through which a radiation with arbitrary spectrum, incidence angle, and polarization state enters the crystal, and by evaluating the corresponding generation rate at each node of the discretization grid. The code equipped with this new capability makes the description of realistic semiconductor optical sensors feasible.
Optical generation in semiconductor-device analysis, a general purpose implementation / Verzellesi, Giovanni; M. C., Vecchi; M., Zen; M., Rudan. - STAMPA. - 4:(1991), pp. 57-64. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Devices and Processes (SISDEP) tenutosi a Zurich (Switzerland) nel Sept. 1991).
Optical generation in semiconductor-device analysis, a general purpose implementation
VERZELLESI, Giovanni;
1991
Abstract
The description of the optical-generation phenomena has been incorporated in the semiconductor-device analysis program HFIELDS. This has been achieved by introducing a number of optical windows and interleaved material layers through which a radiation with arbitrary spectrum, incidence angle, and polarization state enters the crystal, and by evaluating the corresponding generation rate at each node of the discretization grid. The code equipped with this new capability makes the description of realistic semiconductor optical sensors feasible.
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