A numerical methodology for device-level analysis of Light-Addressable Potentiometric Sensors (LAPS) is presented. The formulation of charge transport equations adopted in the present model accounts for the charge layers at the electrolyte-insulator interface and for AC modulated optical generation rate. Comparisons with actual LAPS responses provide validation of the TCAD tool.
Light-Addressable Potentiometric Sensors - Model and Experiments / L., Colalongo; Verzellesi, Giovanni; D., Passeri; A., Lui; M., Rudan; P., Ciampolini. - STAMPA. - (1996), pp. 211-214. (Intervento presentato al convegno European Solid State Device Research Conference (ESSDERC) tenutosi a Bologna (Italy) nel Sept. 1996).
Light-Addressable Potentiometric Sensors - Model and Experiments
VERZELLESI, Giovanni;
1996
Abstract
A numerical methodology for device-level analysis of Light-Addressable Potentiometric Sensors (LAPS) is presented. The formulation of charge transport equations adopted in the present model accounts for the charge layers at the electrolyte-insulator interface and for AC modulated optical generation rate. Comparisons with actual LAPS responses provide validation of the TCAD tool.
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