A numerical simulation technique suitable for device-level analysis of ion-sensitive devices is presented. The charge layers which develop at the electrolyte-insulator interface of an EIS system are taken into account in the formulation of charge transport equations, thus providing a self-consistent picture of charge and field distribution within the device. AC-modulated optical generation rate has also been taken into account, to make the simulation of LAPS device feasible. Comparisons with actual device responses provide validation of the TCAD tool.
Numerical analysis of ISFET and LAPS devices / Verzellesi, Giovanni; L., Colalongo; D., Passeri; B., Margesin; M., Rudan; G., Soncini; P., Ciampolini. - STAMPA. - (1996), pp. 1079-1082. (Intervento presentato al convegno European Conference on Solid-State Transducers (EUROSENSORS) tenutosi a Lueven (Belgium) nel Sept. 1996).
Numerical analysis of ISFET and LAPS devices
VERZELLESI, Giovanni;
1996
Abstract
A numerical simulation technique suitable for device-level analysis of ion-sensitive devices is presented. The charge layers which develop at the electrolyte-insulator interface of an EIS system are taken into account in the formulation of charge transport equations, thus providing a self-consistent picture of charge and field distribution within the device. AC-modulated optical generation rate has also been taken into account, to make the simulation of LAPS device feasible. Comparisons with actual device responses provide validation of the TCAD tool.
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