This paper presents the results obtained both by experimental measurements and numerical simulations carried out on state-of-the-art field plated GaAs-based pHEMTs.The effect of the field-plate length on DC and RF operation will be discussed showing that the adoption of an optimal field-plate structure can significantly boost the device RF power performance, resulting in power density up to 2W/mm measured at 2 GHz.
Trapping phenomena in field-plated high power GaAs pHEMTs / Chini, Alessandro; DI LECCE, Valerio; Esposto, Michele; Verzellesi, Giovanni; Lavanga, S.; Cetronio, A.; Lanzieri, C.. - STAMPA. - (2008), pp. 65-66. (Intervento presentato al convegno 17th European Heterostructure Technology Workshop, HETECH 2008 tenutosi a Venezia (Italy) nel 2-5 Nov. 2008).
Trapping phenomena in field-plated high power GaAs pHEMTs
CHINI, Alessandro;DI LECCE, Valerio;ESPOSTO, Michele;VERZELLESI, Giovanni;
2008
Abstract
This paper presents the results obtained both by experimental measurements and numerical simulations carried out on state-of-the-art field plated GaAs-based pHEMTs.The effect of the field-plate length on DC and RF operation will be discussed showing that the adoption of an optimal field-plate structure can significantly boost the device RF power performance, resulting in power density up to 2W/mm measured at 2 GHz.
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