High-voltage operation can be a solution to obtain full charge collection in strongly irradiated silicon detectors. Themaximum bias voltage which can be applied is limited by the breakdown point of the junction. We show how multiguardstructures can enhance the breakdown voltage in p-n silicon devices designed for applications in the LHC environment.
High voltage operation of silicon devices for LHC experiments / N., Bacchetta; D., Bisello; A., Candelori; M., Cavone; G. F., Dalla Betta; M., Da Rold; G., De Liso; R., Dell'Orso; P. G., Fuochi; A., Messineo; O., Militaru; A., Paccagnella; G., Tonelli; P. G., Verdini; Verzellesi, Giovanni; R., Wheadon. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 409:(1998), pp. 139-141.
High voltage operation of silicon devices for LHC experiments
VERZELLESI, Giovanni;
1998
Abstract
High-voltage operation can be a solution to obtain full charge collection in strongly irradiated silicon detectors. Themaximum bias voltage which can be applied is limited by the breakdown point of the junction. We show how multiguardstructures can enhance the breakdown voltage in p-n silicon devices designed for applications in the LHC environment.
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