Traps are identified in AlGaN-GaN HEMTs by means of different characterization techniques and the associated physical behavior is interpreted with the aid of numerical device simulations. It is in particular been shown that, under specific bias conditions, buffer traps can produce the same type of current-mode DLTS (I-DLTS), ICTS, and gm-dispersion signals that are generally attributed to surface traps. Clarifying this fact is crucial for both reliability testing and device optimization, as it can completely hinder a correct identification of degradation mechanisms.
Interpretation of buffer-trap effects in AlGaN/GaN HEMTs / Faqir, Mustapha; Verzellesi, Giovanni; Fantini, Fausto; A., Cavallini; A., Castaldini; F., Danesin; G., Meneghesso; E., Zanoni. - STAMPA. - (2007). (Intervento presentato al convegno European Workshop on Heterostructure Technology tenutosi a Frejus (France) nel Sept. 2007).
Interpretation of buffer-trap effects in AlGaN/GaN HEMTs
FAQIR, Mustapha;VERZELLESI, Giovanni;FANTINI, Fausto;
2007
Abstract
Traps are identified in AlGaN-GaN HEMTs by means of different characterization techniques and the associated physical behavior is interpreted with the aid of numerical device simulations. It is in particular been shown that, under specific bias conditions, buffer traps can produce the same type of current-mode DLTS (I-DLTS), ICTS, and gm-dispersion signals that are generally attributed to surface traps. Clarifying this fact is crucial for both reliability testing and device optimization, as it can completely hinder a correct identification of degradation mechanisms.
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