NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes for the control of their relative position and spread in the charge trapping material. In this paper, we present a new characterization tool able to sense charge distribution features in different program/erase conditions that can be efficiently used for program/erase bias optimization and reliability predictions. This new tool exploits temperature effects on ID-VGS current measurements
Temperature Monitor: a New Tool to Profile Charge Distribution in NROMTM Memory Devices / L., Avital; Padovani, Andrea; Larcher, Luca; I., Bloom; R., Arie; Pavan, Paolo; B., Eitan. - STAMPA. - (2006), pp. 534-540. (Intervento presentato al convegno 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 tenutosi a San Jose, CA, usa nel 26-30 March 2006) [10.1109/RELPHY.2006.251275].
Temperature Monitor: a New Tool to Profile Charge Distribution in NROMTM Memory Devices
PADOVANI, ANDREA;LARCHER, Luca;PAVAN, Paolo;
2006
Abstract
NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes for the control of their relative position and spread in the charge trapping material. In this paper, we present a new characterization tool able to sense charge distribution features in different program/erase conditions that can be efficiently used for program/erase bias optimization and reliability predictions. This new tool exploits temperature effects on ID-VGS current measurements
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