High-electric-field degradation phenomena are studied in GaN-capped AlGaN-GaN HEMTs by comparing experimental results with numerical device simulations and assessing the suitability of different degradation scenarios to account for the observed electrical stress effects.
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs / Faqir, Mustapha; Chini, Alessandro; Verzellesi, Giovanni; Fantini, Fausto; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Bernat, J.; Kordos, P.. - STAMPA. - (2006). (Intervento presentato al convegno 15th International Workshop on Heterostructure Technology HETECH 2006 tenutosi a Manchester (UK) nel 1-4 October 2006).
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs
FAQIR, Mustapha;CHINI, Alessandro;VERZELLESI, Giovanni;FANTINI, Fausto;
2006
Abstract
High-electric-field degradation phenomena are studied in GaN-capped AlGaN-GaN HEMTs by comparing experimental results with numerical device simulations and assessing the suitability of different degradation scenarios to account for the observed electrical stress effects.
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