The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-state gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. We demonstrate that surface traps and deep impurity levels can give rise to anomalous phenomena such as Id -Vds kinks in the drain current, dispersion of transconductance and negative thermal coefficient of breakdown voltage.
Breakdown and low-temperature anomalous effects in 6H SiC JFETs / G., Meneghesso; A., Bartolini; Verzellesi, Giovanni; A., Cavallini; A., Castaldini; Canali, Claudio; E., Zanoni. - STAMPA. - (1998), pp. 695-698. (Intervento presentato al convegno IEEE International Electron Devices Meeting (IEDM) tenutosi a S. Francisco (California, USA) nel Dec. 1998).
Breakdown and low-temperature anomalous effects in 6H SiC JFETs
VERZELLESI, Giovanni;CANALI, Claudio;
1998
Abstract
The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-state gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. We demonstrate that surface traps and deep impurity levels can give rise to anomalous phenomena such as Id -Vds kinks in the drain current, dispersion of transconductance and negative thermal coefficient of breakdown voltage.
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