In this paper, deep levels are characterized in 6H-SiC, buried gate, n-channel JFETs by means of capacitance-mode (C-) and current-mode (I-) Deep Level Transient Spectroscopy (DLTS) and transconductance frequency dispersion measurements. Moreover, the drain-current transients following a gate-to-source voltage step are analyzed both experimentally and through two-dimensional device simulations allowing the dierent deep levels to be localized both energetically and spatially.

Trap-related effects in 6H-SiC buried-gate JFETs / G., Meneghesso; Chini, Alessandro; E., Zanoni; Verzellesi, Giovanni; Tediosi, Erika; Canali, Claudio; A., Cavallini; A., Castaldini. - STAMPA. - (2001), pp. 169-170. (Intervento presentato al convegno Workshop On Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) tenutosi a Quartu S. Elena (Cagliari, Italy) nel May 2001).

Trap-related effects in 6H-SiC buried-gate JFETs

CHINI, Alessandro;VERZELLESI, Giovanni;TEDIOSI, Erika;CANALI, Claudio;
2001

Abstract

In this paper, deep levels are characterized in 6H-SiC, buried gate, n-channel JFETs by means of capacitance-mode (C-) and current-mode (I-) Deep Level Transient Spectroscopy (DLTS) and transconductance frequency dispersion measurements. Moreover, the drain-current transients following a gate-to-source voltage step are analyzed both experimentally and through two-dimensional device simulations allowing the dierent deep levels to be localized both energetically and spatially.
2001
Workshop On Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE)
Quartu S. Elena (Cagliari, Italy)
May 2001
G., Meneghesso; Chini, Alessandro; E., Zanoni; Verzellesi, Giovanni; Tediosi, Erika; Canali, Claudio; A., Cavallini; A., Castaldini
Trap-related effects in 6H-SiC buried-gate JFETs / G., Meneghesso; Chini, Alessandro; E., Zanoni; Verzellesi, Giovanni; Tediosi, Erika; Canali, Claudio; A., Cavallini; A., Castaldini. - STAMPA. - (2001), pp. 169-170. (Intervento presentato al convegno Workshop On Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) tenutosi a Quartu S. Elena (Cagliari, Italy) nel May 2001).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/467020
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