In this summary we are showing preliminary but important and new results obtained in EPROM arrays after high-LET ion irradiation. These devices are characterized by larger integration density and thicker tunnel oxide than Flash memories [15-16]. Moreover, these device are designed to store information for very long times, not for frequent refresh of information, or for on-site reprogramming. As a consequence, target applications are different from those of Flash, too. Nevertheless, we are showing that, if devices are subjected to heavy ion irradiation (as can happen during long space missions) the information stored in EPROM are as vulnerable as those stored in Flash memories [15].
Single Event Charge Loss in EPROMs / G., Cellere; Larcher, Luca; J., Wyss; A., Candelori; P., Caprara; A., Paccagnella. - STAMPA. - (2002), pp. 1-4. (Intervento presentato al convegno RADECS tenutosi a Padova, Italy nel 19-20 settembre 2002).
Single Event Charge Loss in EPROMs
LARCHER, Luca;
2002
Abstract
In this summary we are showing preliminary but important and new results obtained in EPROM arrays after high-LET ion irradiation. These devices are characterized by larger integration density and thicker tunnel oxide than Flash memories [15-16]. Moreover, these device are designed to store information for very long times, not for frequent refresh of information, or for on-site reprogramming. As a consequence, target applications are different from those of Flash, too. Nevertheless, we are showing that, if devices are subjected to heavy ion irradiation (as can happen during long space missions) the information stored in EPROM are as vulnerable as those stored in Flash memories [15].Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris