We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitatively predict the gate current across ultra-thin oxides. Simulations nicely fit the experimental quantum oscillations of the gate current in the Fowler-Nordheim tunnelling regime. The oscillation period of the gate current has been empirically correlated with the oxide thickness. The low-field stress induced leakage current can be fitted by our model as well, by inserting oxide traps mediating an inelastic trap-assisted tunnelling
New double-box model for SILC and tunnel current in ultra-thin MOS devices / Larcher, Luca; A., Paccagnella; A., Scarpa; G., Ghidini. - STAMPA. - (1998), pp. 901-904. (Intervento presentato al convegno Electron Devices Meeting, 1998. IEDM '98 Technical Digest., International tenutosi a San Francisco (USA) nel 6-9 December 1998).
New double-box model for SILC and tunnel current in ultra-thin MOS devices
LARCHER, Luca;
1998
Abstract
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitatively predict the gate current across ultra-thin oxides. Simulations nicely fit the experimental quantum oscillations of the gate current in the Fowler-Nordheim tunnelling regime. The oscillation period of the gate current has been empirically correlated with the oxide thickness. The low-field stress induced leakage current can be fitted by our model as well, by inserting oxide traps mediating an inelastic trap-assisted tunnellingPubblicazioni consigliate
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